Santa Clara, CA und Kyoto, Japan, 10. Sept. 2026 (GLOBE NEWSWIRE) -- ROHM Semiconductor gab heute bekannt, die „SDR01 Series“ hoch schockstromfester Chipwiderstände entwickelt zu haben, die in der Baugröße 0402 (1005 metrisch) eine branchenführende* Nennleistung von 0,33 W liefern. Entwickelt für elektronische Geräte, bei denen die Bestückungsdichten weiter zunehmen, eignet sich die Serie beson...
Santa Clara, CA and Kyoto, Japan, June 09, 2026 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced it has developed the TSC3PAK (14.00 × 18.58 × 3.50mm) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product enables automated mounting while achieving heat dissipation performance comparabl...
BAY CITY, Texas--(BUSINESS WIRE)--Röhm is marking a major milestone at its Bay City, Texas methyl methacrylate (MMA) plant, where the company's proprietary LiMA technology has been operating at full industrial scale for the first time worldwide. Following start‑up, the plant underwent a structured ramp‑up phase, successfully reaching and sustaining full‑scale operation in recent months. To reco...
Santa Clara, CA and Kyoto, Japan, June 03, 2026 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that its 750 V SiC MOSFET has been adopted in a BBU (Battery Backup Unit) for AI server power supplies. With the rise of generative AI, AI server power systems are shifting to higher voltages and rapidly transitioning to HVDC (high-voltage direct current) architectures. In this environment, RO...
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